International Rectifier irg4zc70ud free download

File name irg4zc70ud.pdf

PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C q UltraFast IGBT optimized for high switching frequencies n-channel VCES = 600V q IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations VCE(ON)typ = 1.5V q Low gate charge G q Low profile low inductance SMD-10 package @VGE = 15V, IC = 50A E(k) q Separated control & Power-connections for E easy paralleling q Inherently coplanar pins and tab q Easy solder inspection and cleaning Benefits q Highest power density and efficiency available q HEXFRED diodes optimized for performance with IGBTs; Minimized recovery characteristics q IGBTs optimized for specific application conditions; high input impedance requires low gate drive power SMD-10 q Low noise and interference Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25